Solved Questions for Midterm Exam - Semiconductor Devices I | EE 221, Exams of Physics of semiconductor devices

Download Solved Questions for Midterm Exam - Semiconductor Devices I | EE 221 and more Exams Physics of semiconductor devices in PDF only on Docsity!

Instruction: Answer the following 10 questions by writing down one and only one letter corresponding to your choice in the Answer space provided. \0 points for each question. Tp’ Cie B - AN, BY | | Cx Ge = ——Co | Emre 1/9; To EX FIGURE 1. Hybrid 1 model of a Bipolar Transistor (1) Figure 1 represents a small signal AC model of a Bipolar transistor operating in normal mode. If we were to draw a corresponding Large Signal Model, the element denoted by 1/g, in Figure 1 would be represented as (a) a resistor (b) a conductor (c) a diode (d) a current source (e) a voltage source (f) ground Answer: © (2) Early Effect is represented in Figure 1 by (@) To (b) yal (d) ty ©) Cr L) SmVore Answer: aa ww asarh ar tu Figure 2 (3) Figure 2 above shows a symmetrical double base BJT which we shall name it as T2. Only emitter, base and collector are shown. Assume mobility for N,=10'*cm’? at 300°K. is: 5=144em"s"V" T?2 has a uniformly doped base with N,=10'*em*, W=30um, hr + bn=300cm’s "Vv", =3 pm, ,=500ns The total base resistance at 300°K of this transistor is approximately (a) 92.Q (b) 184.8 (c) 46 Q (d) 34.2 &) 41 Q Answer: 4