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ECE 250 Exam 1: Calculating Carrier Concentration & Capacitance in Silicon - Prof. Marc E., Exams of Electrical and Electronics Engineering

A problem from an electrical and computer engineering (ece) exam focusing on calculating intrinsic carrier concentration and capacitance in silicon using given constants and formulas. Students are required to apply the provided equations and constants to find the values of intrinsic carrier concentration, capacitance, and voltage.

Typology: Exams

Pre 2010

Uploaded on 08/16/2009

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koofers-user-jgc 🇺🇸

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V

bi

K

B

⋅ 300 ⋅K

q

ln

N

A

N

D

n i

(300 K ⋅ )

2

V

bi

=0.803 V

C

jo

:=2 pF⋅

C

J

C

jo

10 V⋅

V

bi

C

J

=0.545 pF