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Power Electronics - Homework 1 Problems | ECE 481, Assignments of Electrical and Electronics Engineering

Material Type: Assignment; Professor: Tolbert; Class: Power Electronics; Subject: Electrical And Computer Engr; University: University of Tennessee - Knoxville; Term: Fall 2009;

Typology: Assignments

Pre 2010

Uploaded on 08/31/2009

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Homework #1 ECE 481/523 Fall 2009
Due Friday, August 28, 2009
1. Generally, semiconductors are used in the switching mode for power electronic circuits,
since this mode of operation makes it possible to control a large amount of load power with
low power dissipation in the semiconductor switching device. This problem is intended to
illustrate the rather large power dissipation in a transistor when it is used in the active mode
as a linear amplifying element (linear regulator) instead of in the switching mode.
Consider a circuit of Fig. 1P-1 with the supply voltage E = 100 Vdc and a purely resistive
load R = 10 ohms. Assume that a constant base current is supplied such that the collector
current is I amperes. Derive expressions for the power delivered to the load and the power
dissipated in the transistor as a function of E, R, and I. Calculate and plot (graph) the
transistor dissipation and the power delivered to the load as a function of I, for values of I =
0, 1, 2, ... , 10 A. Assume there is negligible leakage current when the transistor is
completely turned off (I = 0). When I = 10 A, assume that there is sufficient base current to
drive the transistor hard into saturation such that the VCE(SAT) is essentially zero.
2. Repeat Problem 1 for the shunt transistor regulator shown in Fig. 1P-2, with the series
transistor Rs = 10 ohms.
3. Consider the circuit of Fig. 1P-1 where the series transistor is now operated as a switch at a
fixed repetition frequency but with varying duty cycle, d
(ON time/switching period). Assume that the transistor on-state voltage drop is equal to 1 V
and constant during the ON interval, and neglect the leakage current and transistor switching
losses. With E = 100 V and R = 10 ohms for this problem, calculate and plot the power
dissipated in the transistor and the power delivered to the load as a function of the duty cycle
of the switching.
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Homework #1 ECE 481/523 Fall 2009

Due Friday, August 28, 2009

  1. Generally, semiconductors are used in the switching mode for power electronic circuits, since this mode of operation makes it possible to control a large amount of load power with low power dissipation in the semiconductor switching device. This problem is intended to illustrate the rather large power dissipation in a transistor when it is used in the active mode as a linear amplifying element (linear regulator) instead of in the switching mode.

Consider a circuit of Fig. 1P-1 with the supply voltage E = 100 Vdc and a purely resistive load R = 10 ohms. Assume that a constant base current is supplied such that the collector current is I amperes. Derive expressions for the power delivered to the load and the power dissipated in the transistor as a function of E , R , and I. Calculate and plot (graph) the transistor dissipation and the power delivered to the load as a function of I , for values of I = 0, 1, 2, ... , 10 A. Assume there is negligible leakage current when the transistor is completely turned off (I = 0). When I = 10 A, assume that there is sufficient base current to drive the transistor hard into saturation such that the VCE(SAT) is essentially zero.

  1. Repeat Problem 1 for the shunt transistor regulator shown in Fig. 1P-2, with the series transistor Rs = 10 ohms.
  2. Consider the circuit of Fig. 1P-1 where the series transistor is now operated as a switch at a fixed repetition frequency but with varying duty cycle, d (ON time/switching period). Assume that the transistor on-state voltage drop is equal to 1 V and constant during the ON interval, and neglect the leakage current and transistor switching losses. With E = 100 V and R = 10 ohms for this problem, calculate and plot the power dissipated in the transistor and the power delivered to the load as a function of the duty cycle of the switching.
  1. Consider the switching transistor circuit of Fig. 1-1 below, where the transistor current and voltage are assumed to change linearly during switching. Assume that rated collector- emitter voltage is across the transistor when it is off, and that rated current flows through the transistor when it is on. These assumptions imply that both the leakage current during the OFF state and the ON state voltage drop are negligible, and thus power dissipation occurs in the transistor only during switching. The switching transistor ratings are as follows: VCE = 200 V I (^) C = 20 A Maximum permissible dissipation = 100 W TSW = 1 μsec (on or off switching)

a) Calculate and plot the instantaneous power dissipated in the transistor during a switching-ON interval.

b) Determine the maximum number of switching per period allowable and the highest allowable frequency of operation for repetitive switching. (Remember that with repetitive switching, there is one ON-switching followed by one OFF-switching during each cycle.)