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Material Type: Notes; Class: Measurement & Instrumentation; Subject: Electrical Engineering; University: New Mexico Institute of Mining and Technology; Term: Fall 1996;
Typology: Study notes
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The OP999 photodiode consists of a PIN silicon photodiode mounted in a dark blue plastic injection molded shell package. The narrow receiving angle provides excellent on-axis coupling. The sensors are 100% production tested for close correlation with Optek GaAlAs emitters.
Optek’s packaging process provides excellent optical and mechanical axis alignment. The shell also provides excellent optical lens surface, control of chip placement, and consistency of the outside package dimensions.
Reverse Breakdown Voltage......................................... 60 V Storage and Operating Temperature Range.................. -40o^ C to +100o^ C Lead Soldering Temperature (1/16 inch [1.6 mm] from case for 5 sec. with soldering iron)................................................. 260o^ C(1) Power Dissipation............................................ 100 mW(2) Notes: (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. Max. 20 grams force may be applied to leads when soldering. (2) Derate linearly 1.67 mW/o^ C above 25o^ C. (3) Light source is an unfiltered GaAlAs emitting diode operating at peak emission wavelength of 890 nm and Ee(APT) of 0.25 mW/cm^2. (4) This dimension is held to within ± 0.005" on the flange edge and may vary up to ± 0.020" in the area of the leads.
Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-
Relative Response vs. Wavelength
λ- Wavelength - nm
Coupling Characteristics OP999 and OP
Distance Between Lens Tips - inches
VR = 5 V IF = 20 mA
Type OP
Optek reserves the right to make changes at any time in order to improve de sign and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-
IL Reverse Light Current 6.5 15 μA VR = 5 V, Ee = 0.25 mW/cm2(3) ID Reverse Dark Current 1 60 nA VR = 30 V, Ee = 0 V(BR) Reverse Breakdown Voltage 60 V IR = 100 μA VF Forward Voltage 1.2 V IF = 1 mA CT Total Capacitance 4 pF VR = 20 V, Ee = 0, f = 1.0 MHz tr, tf Rise Time, Fall Time 5 ns VR = 20 V, λ = 850 nm, RL = 50 Ω
Light Current vs. Irradiance Switching Time Test Circuit Light Current vs. Angular Displacement
θ - Angular Displacement - Deg.
Test Conditions: λ = 935 nm VR = 5 V
Ee - Irradiance - mW/cm^2
Normalized Light Current vs Reverse Voltage
Total Capacitance vs Reverse Voltage
VR - Reverse Voltage - V VR - Reverse Voltage - V
TA = 25o^ C λ= 935 nm Normalized to VR = 5 V
TA = 25o^ C Ee = 0 mW/cm^2 f = 1 MHz
VR = 5 V TA = 25o^ C λ= 890 nm
Normalized Light and Dark Current vs Ambient Temperature
TA - Ambient Temperature - oC
VR = 5 V λ= 890 nm Normalized to TA = 25o^ C
Dark Current
Light Current