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PIN Silicon Photodiode Type OP999 - Lecture Notes | EE 521, Study notes of Electrical and Electronics Engineering

Material Type: Notes; Class: Measurement & Instrumentation; Subject: Electrical Engineering; University: New Mexico Institute of Mining and Technology; Term: Fall 1996;

Typology: Study notes

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Uploaded on 08/08/2009

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Fea tures
Narrow receiving angle
Linear response vs. irradiance
Fast switching time
T-1 3/4 package style
De scrip tion
The OP999 photodiode consists of a PIN
silicon photodiode mounted in a dark
blue plastic injection molded shell
package. The narrow receiving angle
provides excellent on-axis coupling. The
sensors are 100% production tested for
close correlation with Optek GaAlAs
emitters.
Opteks packaging process provides
excellent optical and mechanical axis
alignment. The shell also provides
excellent optical lens surface, control of
chip placement, and consistency of the
outside package dimensions.
Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted)
Re verse Break down Volt age......................................... 60 V
Stor age and Op er at ing Tem pera ture Range . . . . . . . . . . . . . . . . . . -40o C to +100o C
Lead Sol der ing Tem pera ture (1/16 inch [1.6 mm] from case for 5 sec. with
sol der ing iron)................................................. 260o C(1)
Power Dis si pa tion ............................................ 100 mW(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.67 mW/o C above 25o C.
(3) Light source is an unfiltered GaAlAs emitting diode operating at peak emission wavelength of
890 nm and Ee(APT) of 0.25 mW/cm2.
(4) This dimension is held to within ± 0.005" on the flange edge and may vary up to ± 0.020" in
the area of the leads.
Typi cal Per form ance Curves
Prod uct Bul le tin OP999
June 1996
PIN Sili con Pho to di ode
Type OP999
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
Relative Response vs.
Wavelength
λ - Wave length - nm
Coupling Characteristics
OP999 and OP299
Dis tance Be tween Lens Tips - inches
VR = 5 V
IF = 20 mA
3-66
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Features

  • Narrow receiving angle
  • Linear response vs. irradiance
  • Fast switching time
  • T-1 3/4 package style

Description

The OP999 photodiode consists of a PIN silicon photodiode mounted in a dark blue plastic injection molded shell package. The narrow receiving angle provides excellent on-axis coupling. The sensors are 100% production tested for close correlation with Optek GaAlAs emitters.

Optek’s packaging process provides excellent optical and mechanical axis alignment. The shell also provides excellent optical lens surface, control of chip placement, and consistency of the outside package dimensions.

Absolute Maximum Ratings (TA = 25o^ C unless otherwise noted)

Reverse Breakdown Voltage......................................... 60 V Storage and Operating Temperature Range.................. -40o^ C to +100o^ C Lead Soldering Temperature (1/16 inch [1.6 mm] from case for 5 sec. with soldering iron)................................................. 260o^ C(1) Power Dissipation............................................ 100 mW(2) Notes: (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. Max. 20 grams force may be applied to leads when soldering. (2) Derate linearly 1.67 mW/o^ C above 25o^ C. (3) Light source is an unfiltered GaAlAs emitting diode operating at peak emission wavelength of 890 nm and Ee(APT) of 0.25 mW/cm^2. (4) This dimension is held to within ± 0.005" on the flange edge and may vary up to ± 0.020" in the area of the leads.

Typical Performance Curves

Product Bulletin OP

June 1996

PIN Silicon Photodiode

Type OP

Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-

Relative Response vs. Wavelength

λ- Wavelength - nm

Coupling Characteristics OP999 and OP

Distance Between Lens Tips - inches

VR = 5 V IF = 20 mA

Type OP

Optek reserves the right to make changes at any time in order to improve de sign and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-

Electrical Characteristics (TA = 25o^ C unless otherwise noted)

SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS

IL Reverse Light Current 6.5 15 μA VR = 5 V, Ee = 0.25 mW/cm2(3) ID Reverse Dark Current 1 60 nA VR = 30 V, Ee = 0 V(BR) Reverse Breakdown Voltage 60 V IR = 100 μA VF Forward Voltage 1.2 V IF = 1 mA CT Total Capacitance 4 pF VR = 20 V, Ee = 0, f = 1.0 MHz tr, tf Rise Time, Fall Time 5 ns VR = 20 V, λ = 850 nm, RL = 50 Ω

Typical Performance Curves

Light Current vs. Irradiance Switching Time Test Circuit Light Current vs. Angular Displacement

θ - Angular Displacement - Deg.

Test Conditions: λ = 935 nm VR = 5 V

Ee - Irradiance - mW/cm^2

Normalized Light Current vs Reverse Voltage

Total Capacitance vs Reverse Voltage

VR - Reverse Voltage - V VR - Reverse Voltage - V

TA = 25o^ C λ= 935 nm Normalized to VR = 5 V

TA = 25o^ C Ee = 0 mW/cm^2 f = 1 MHz

VR = 5 V TA = 25o^ C λ= 890 nm

Normalized Light and Dark Current vs Ambient Temperature

TA - Ambient Temperature - oC

VR = 5 V λ= 890 nm Normalized to TA = 25o^ C

Dark Current

Light Current