Fea tures
•Narrow receiving angle
•Linear response vs. irradiance
•Fast switching time
•T-1 3/4 package style
De scrip tion
The OP999 photodiode consists of a PIN
silicon photodiode mounted in a dark
blue plastic injection molded shell
package. The narrow receiving angle
provides excellent on-axis coupling. The
sensors are 100% production tested for
close correlation with Optek GaAlAs
emitters.
Optek’s packaging process provides
excellent optical and mechanical axis
alignment. The shell also provides
excellent optical lens surface, control of
chip placement, and consistency of the
outside package dimensions.
Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted)
Re verse Break down Volt age......................................... 60 V
Stor age and Op er at ing Tem pera ture Range . . . . . . . . . . . . . . . . . . -40o C to +100o C
Lead Sol der ing Tem pera ture (1/16 inch [1.6 mm] from case for 5 sec. with
sol der ing iron)................................................. 260o C(1)
Power Dis si pa tion ............................................ 100 mW(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.67 mW/o C above 25o C.
(3) Light source is an unfiltered GaAlAs emitting diode operating at peak emission wavelength of
890 nm and Ee(APT) of 0.25 mW/cm2.
(4) This dimension is held to within ± 0.005" on the flange edge and may vary up to ± 0.020" in
the area of the leads.
Typi cal Per form ance Curves
Prod uct Bul le tin OP999
June 1996
PIN Sili con Pho to di ode
Type OP999
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
Relative Response vs.
Wavelength
λ - Wave length - nm
Coupling Characteristics
OP999 and OP299
Dis tance Be tween Lens Tips - inches
VR = 5 V
IF = 20 mA
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