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Abou GaN Hemt
Typology: Thesis
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Low dimensional System
Low dimensional System
Master of Nanoscience
Master of Nanoscience
Olatz Idigoras Lertxundi
Olatz Idigoras Lertxundi
Introduction
Introduction
Gallium Nitrate
Gallium Nitrate
AlGaN/GaN HEMT operation principles
AlGaN/GaN HEMT operation principles
2 dimensional electron gas
2 dimensional electron gas
Origin of 2 dimensional electron gas
Origin of 2 dimensional electron gas
Charge control
Charge control
Summary
Summary
References
References
Heterojuction 2
3 contacts:
Source and drain
ohmic contacts.
Gate Schottky
barrier.
Current flows from
the source to the
VDS cons t
GS
DS
V
I
gm
tan
Output
characteristic:
Transconductance
Introduction
Introduction
Gallium Nitrate
Gallium Nitrate
AlGaN/GaN HEMT operation principles
AlGaN/GaN HEMT operation principles
2 dimensional electron gas
2 dimensional electron gas
Origin of 2 dimensional electron gas
Origin of 2 dimensional electron gas
Charge control
Charge control
Summary
Summary
References
References
High electron density (Polarization
High electron density (Polarization
effects).
effects).
Adequate for high power amplifiers
Adequate for high power amplifiers
High breakdown voltage.
High breakdown voltage.
Large heat capacity.
Large heat capacity.
Necessary to growth in a wafer of
Necessary to growth in a wafer of
another material.
another material.
Molecular Beam Epitaxy.
Molecular Beam Epitaxy.
Metal Organic Vapor Beam Epitaxy.
Metal Organic Vapor Beam Epitaxy.
Introduction
Introduction
Gallium Nitrate
Gallium Nitrate
AlGaN/GaN HEMT operation principles
AlGaN/GaN HEMT operation principles
2 dimensional electron gas
2 dimensional electron gas
Origin of 2 dimensional electron gas
Origin of 2 dimensional electron gas
Charge control
Charge control
Summary
Summary
References
References
Discontinuity through the conduction
band of the two semiconductors
determines a charge transfer,
creating a triangular potential.
Electrons are confined in the
triangular potential in discrete
quantum state.
Mobility of the electrons in 2DEG is
higher than in a bulk.
AlGaN/GaN HEMTs transistor don’t need
AlGaN/GaN HEMTs transistor don’t need
doping to obtain a high electron density.
doping to obtain a high electron density.
Spontaneous polarization.
Spontaneous polarization.
Piezoelectronic polarization.
Piezoelectronic polarization.
=
=
10
10
13
13
(cm
(cm
2
2
/Vs) carrier
/Vs) carrier
concentration
concentration
Spontaneous polarization.
Wurtzite structure.
Polarization at zero strain.
Due to the lack of symmetry.
It appears in both layers.
Piezoelectronic polarization.
Difference of the lattice constant of GaN
and AlGaN.
Pseudomorfic growth of AlGaN.
Introduction
Introduction
Gallium Nitrate
Gallium Nitrate
AlGaN/GaN HEMT operation principles
AlGaN/GaN HEMT operation principles
2 dimensional electron gas
2 dimensional electron gas
Origin of 2 dimensional electron gas
Origin of 2 dimensional electron gas
Charge control
Charge control
Summary
Summary
References
References
Introduction
Introduction
Gallium Nitrate
Gallium Nitrate
AlGaN/GaN HEMT operation principles
AlGaN/GaN HEMT operation principles
2 dimensional electron gas
2 dimensional electron gas
Origin of 2 dimensional electron gas
Origin of 2 dimensional electron gas
Charge control
Charge control
Summary
Summary
References
References
“
“ Crecimiento y fabricación de transistores HEMT
Crecimiento y fabricación de transistores HEMT
de AlGaN/GaN por epitaxia de haces moleculares.”
de AlGaN/GaN por epitaxia de haces moleculares.”
Tesis Doctoral, Ana Jiménez Martín.
Tesis Doctoral, Ana Jiménez Martín.
“
“ The physics of low dimensional semiconductors.”
The physics of low dimensional semiconductors.”
John H. Davies.
John H. Davies.
“
“ Characterization of advanced AlGaN HEMT
Characterization of advanced AlGaN HEMT
structures”
structures”
Anders Lundskog.
Anders Lundskog.
“
“ The physics and chemistry of Solids”
The physics and chemistry of Solids” Stephen
Stephen
Elliot.
Elliot.
“
“ GaN based power high electron mobility
GaN based power high electron mobility
transistor”
transistor” Shreepad Karmalkar.
Shreepad Karmalkar.
“
“ Power-Supported Bridges for Multi Finger
Power-Supported Bridges for Multi Finger
AlGaN/GaN Heterojunciton Field Effect Transistor
AlGaN/GaN Heterojunciton Field Effect Transistor
(HFET)” Michael H.Willemann
(HFET)” Michael H.Willemann