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Hemt GaN, Thesis of Advanced Computational Complexity

Abou GaN Hemt

Typology: Thesis

2014/2015

Uploaded on 11/01/2015

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(AlGaN/GaN)
(AlGaN/GaN)
High electron mobility
High electron mobility
transistors
transistors
Low dimensional System
Low dimensional System
Master of Nanoscience
Master of Nanoscience
Olatz Idigoras Lertxundi
Olatz Idigoras Lertxundi
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pf9
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(AlGaN/GaN)

(AlGaN/GaN)

High electron mobility

High electron mobility

transistors

transistors

Low dimensional System

Low dimensional System

Master of Nanoscience

Master of Nanoscience

Olatz Idigoras Lertxundi

Olatz Idigoras Lertxundi

Outline

Outline

Introduction

Introduction

Gallium Nitrate

Gallium Nitrate

AlGaN/GaN HEMT operation principles

AlGaN/GaN HEMT operation principles

2 dimensional electron gas

2 dimensional electron gas

Origin of 2 dimensional electron gas

Origin of 2 dimensional electron gas

Charge control

Charge control

Summary

Summary

References

References

Introduction

Introduction

Heterojuction  2

DEG

3 contacts:

Source and drain 

ohmic contacts.

Gate Schottky

barrier.

Current flows from

the source to the

Introduction

Introduction

VDS cons t

GS

DS

V

I

gm

 tan

Output

characteristic:

Transconductance

Outline

Outline

Introduction

Introduction

Gallium Nitrate

Gallium Nitrate

AlGaN/GaN HEMT operation principles

AlGaN/GaN HEMT operation principles

2 dimensional electron gas

2 dimensional electron gas

Origin of 2 dimensional electron gas

Origin of 2 dimensional electron gas

Charge control

Charge control

Summary

Summary

References

References

Gallium Nitrate

Gallium Nitrate

High electron density (Polarization

High electron density (Polarization

effects).

effects).

Adequate for high power amplifiers

Adequate for high power amplifiers 

High breakdown voltage.

High breakdown voltage.

Large heat capacity.

Large heat capacity.

Necessary to growth in a wafer of

Necessary to growth in a wafer of

another material.

another material.

Molecular Beam Epitaxy.

Molecular Beam Epitaxy.

Metal Organic Vapor Beam Epitaxy.

Metal Organic Vapor Beam Epitaxy.

Outline

Outline

Introduction

Introduction

Gallium Nitrate

Gallium Nitrate

AlGaN/GaN HEMT operation principles

AlGaN/GaN HEMT operation principles

2 dimensional electron gas

2 dimensional electron gas

Origin of 2 dimensional electron gas

Origin of 2 dimensional electron gas

Charge control

Charge control

Summary

Summary

References

References

Discontinuity through the conduction

band of the two semiconductors

determines a charge transfer,

creating a triangular potential.

Electrons are confined in the

triangular potential in discrete

quantum state.

Mobility of the electrons in 2DEG is

higher than in a bulk.

Operation principles (2 DEG)

Operation principles (2 DEG)

Operation principles

Operation principles

(Polarization)

(Polarization)

AlGaN/GaN HEMTs transistor don’t need

AlGaN/GaN HEMTs transistor don’t need

doping to obtain a high electron density.

doping to obtain a high electron density.

Spontaneous polarization.

Spontaneous polarization.

Piezoelectronic polarization.

Piezoelectronic polarization.

=

=

10

10

13

13

(cm

(cm

2

2

/Vs) carrier

/Vs) carrier

concentration

concentration

Spontaneous polarization.

Wurtzite structure.

Polarization at zero strain.

Due to the lack of symmetry.

It appears in both layers.

Piezoelectronic polarization.

Difference of the lattice constant of GaN

and AlGaN.

Pseudomorfic growth of AlGaN.

Operation principles

Operation principles

(Polarization)

(Polarization)

Operation principles (Charge

Operation principles (Charge

control)

control)

Outline

Outline

Introduction

Introduction

Gallium Nitrate

Gallium Nitrate

AlGaN/GaN HEMT operation principles

AlGaN/GaN HEMT operation principles

2 dimensional electron gas

2 dimensional electron gas

Origin of 2 dimensional electron gas

Origin of 2 dimensional electron gas

Charge control

Charge control

Summary

Summary

References

References

Outline

Outline

Introduction

Introduction

Gallium Nitrate

Gallium Nitrate

AlGaN/GaN HEMT operation principles

AlGaN/GaN HEMT operation principles

2 dimensional electron gas

2 dimensional electron gas

Origin of 2 dimensional electron gas

Origin of 2 dimensional electron gas

Charge control

Charge control

Summary

Summary

References

References

References

References

“ Crecimiento y fabricación de transistores HEMT

Crecimiento y fabricación de transistores HEMT

de AlGaN/GaN por epitaxia de haces moleculares.”

de AlGaN/GaN por epitaxia de haces moleculares.”

Tesis Doctoral, Ana Jiménez Martín.

Tesis Doctoral, Ana Jiménez Martín.

“ The physics of low dimensional semiconductors.”

The physics of low dimensional semiconductors.”

John H. Davies.

John H. Davies.

“ Characterization of advanced AlGaN HEMT

Characterization of advanced AlGaN HEMT

structures”

structures”

Anders Lundskog.

Anders Lundskog.

“ The physics and chemistry of Solids”

The physics and chemistry of Solids” Stephen

Stephen

Elliot.

Elliot.

“ GaN based power high electron mobility

GaN based power high electron mobility

transistor”

transistor” Shreepad Karmalkar.

Shreepad Karmalkar.

“ Power-Supported Bridges for Multi Finger

Power-Supported Bridges for Multi Finger

AlGaN/GaN Heterojunciton Field Effect Transistor

AlGaN/GaN Heterojunciton Field Effect Transistor

(HFET)” Michael H.Willemann

(HFET)” Michael H.Willemann