(AlGaN/GaN)
(AlGaN/GaN)
High electron mobility
High electron mobility
transistors
transistors
Low dimensional System
Low dimensional System
Master of Nanoscience
Master of Nanoscience
Olatz Idigoras Lertxundi
Olatz Idigoras Lertxundi
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Hemt GaN, Thesis of Advanced Computational Complexity
Abou GaN Hemt
Typology: Thesis
2014/2015
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(AlGaN/GaN)
(AlGaN/GaN)
High electron mobility
High electron mobility
transistors
transistors
Low dimensional System
Low dimensional System
Master of Nanoscience
Master of Nanoscience
Olatz Idigoras Lertxundi
Olatz Idigoras Lertxundi
Outline
Outline
Introduction
Introduction
Gallium Nitrate
Gallium Nitrate
AlGaN/GaN HEMT operation principles
AlGaN/GaN HEMT operation principles
2 dimensional electron gas
2 dimensional electron gas
Origin of 2 dimensional electron gas
Origin of 2 dimensional electron gas
Charge control
Charge control
Summary
Summary
References
References
Introduction
Introduction
Heterojuction 2
DEG
3 contacts:
Source and drain
ohmic contacts.
Gate Schottky
barrier.
Current flows from
the source to the
Introduction
Introduction
VDS cons t
GS
DS
V
I
gm
tan
Output
characteristic:
Transconductance
Outline
Outline
Introduction
Introduction
Gallium Nitrate
Gallium Nitrate
AlGaN/GaN HEMT operation principles
AlGaN/GaN HEMT operation principles
2 dimensional electron gas
2 dimensional electron gas
Origin of 2 dimensional electron gas
Origin of 2 dimensional electron gas
Charge control
Charge control
Summary
Summary
References
References
Gallium Nitrate
Gallium Nitrate
High electron density (Polarization
High electron density (Polarization
effects).
effects).
Adequate for high power amplifiers
Adequate for high power amplifiers
High breakdown voltage.
High breakdown voltage.
Large heat capacity.
Large heat capacity.
Necessary to growth in a wafer of
Necessary to growth in a wafer of
another material.
another material.
Molecular Beam Epitaxy.
Molecular Beam Epitaxy.
Metal Organic Vapor Beam Epitaxy.
Metal Organic Vapor Beam Epitaxy.
Outline
Outline
Introduction
Introduction
Gallium Nitrate
Gallium Nitrate
AlGaN/GaN HEMT operation principles
AlGaN/GaN HEMT operation principles
2 dimensional electron gas
2 dimensional electron gas
Origin of 2 dimensional electron gas
Origin of 2 dimensional electron gas
Charge control
Charge control
Summary
Summary
References
References
Discontinuity through the conduction
band of the two semiconductors
determines a charge transfer,
creating a triangular potential.
Electrons are confined in the
triangular potential in discrete
quantum state.
Mobility of the electrons in 2DEG is
higher than in a bulk.
Operation principles (2 DEG)
Operation principles (2 DEG)
Operation principles
Operation principles
(Polarization)
(Polarization)
AlGaN/GaN HEMTs transistor don’t need
AlGaN/GaN HEMTs transistor don’t need
doping to obtain a high electron density.
doping to obtain a high electron density.
Spontaneous polarization.
Spontaneous polarization.
Piezoelectronic polarization.
Piezoelectronic polarization.
=
=
10
10
13
13
(cm
(cm
2
2
/Vs) carrier
/Vs) carrier
concentration
concentration
Spontaneous polarization.
Wurtzite structure.
Polarization at zero strain.
Due to the lack of symmetry.
It appears in both layers.
Piezoelectronic polarization.
Difference of the lattice constant of GaN
and AlGaN.
Pseudomorfic growth of AlGaN.
Operation principles
Operation principles
(Polarization)
(Polarization)
Operation principles (Charge
Operation principles (Charge
control)
control)
Outline
Outline
Introduction
Introduction
Gallium Nitrate
Gallium Nitrate
AlGaN/GaN HEMT operation principles
AlGaN/GaN HEMT operation principles
2 dimensional electron gas
2 dimensional electron gas
Origin of 2 dimensional electron gas
Origin of 2 dimensional electron gas
Charge control
Charge control
Summary
Summary
References
References
Outline
Outline
Introduction
Introduction
Gallium Nitrate
Gallium Nitrate
AlGaN/GaN HEMT operation principles
AlGaN/GaN HEMT operation principles
2 dimensional electron gas
2 dimensional electron gas
Origin of 2 dimensional electron gas
Origin of 2 dimensional electron gas
Charge control
Charge control
Summary
Summary
References
References
References
References
“
“ Crecimiento y fabricación de transistores HEMT
Crecimiento y fabricación de transistores HEMT
de AlGaN/GaN por epitaxia de haces moleculares.”
de AlGaN/GaN por epitaxia de haces moleculares.”
Tesis Doctoral, Ana Jiménez Martín.
Tesis Doctoral, Ana Jiménez Martín.
“
“ The physics of low dimensional semiconductors.”
The physics of low dimensional semiconductors.”
John H. Davies.
John H. Davies.
“
“ Characterization of advanced AlGaN HEMT
Characterization of advanced AlGaN HEMT
structures”
structures”
Anders Lundskog.
Anders Lundskog.
“
“ The physics and chemistry of Solids”
The physics and chemistry of Solids” Stephen
Stephen
Elliot.
Elliot.
“
“ GaN based power high electron mobility
GaN based power high electron mobility
transistor”
transistor” Shreepad Karmalkar.
Shreepad Karmalkar.
“
“ Power-Supported Bridges for Multi Finger
Power-Supported Bridges for Multi Finger
AlGaN/GaN Heterojunciton Field Effect Transistor
AlGaN/GaN Heterojunciton Field Effect Transistor
(HFET)” Michael H.Willemann
(HFET)” Michael H.Willemann